BD737 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BD737 .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min. Complement to Type BD738. M.

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Datasheet Specifications

Part number: BD737
Manufacturer: Inchange Semiconductor
File Size: 208.09 KB
Datasheet: BD737_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Pea

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BD737 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BD737-like datasheet