BD912 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
DC Current Gain - : hFE = 40@ IC= -0. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min). Complement to Type BD911. Min.

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Datasheet Specifications

Part number: BD912
Manufacturer: Inchange Semiconductor
File Size: 212.81 KB
Datasheet: BD912_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -15 IB Base

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BD912 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor BD912-like datasheet