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BD912I - PNP Transistor

BD912I Description

isc Silicon PNP Power Transistor .
DC Current Gain - : hFE = 40@ IC= -0. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min). Minimum Lot-to-Lot variations for.

BD912I Applications

* Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -10 IB Base

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Datasheet Details

Part number
BD912I
Manufacturer
INCHANGE
File Size
198.03 KB
Datasheet
BD912I-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
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