BDT60 Datasheet - Inchange Semiconductor

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BDT60 Silicon PNP Power Transistor

isc Silicon PNP Darlington Power Transistors BDT60/A/B/C .
DC Current Gain -hFE = 750(Min)@ IC= -1. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Mi.

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Datasheet Details

Part number:

BDT60

Manufacturer:

Inchange Semiconductor

File Size:

216.26 KB

Description:

Silicon PNP Power Transistor

Applications

* Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT60 -60 VCBO Collector-Base Voltage BDT60A -80 V BDT60B -100 BDT60C -120 BDT60 -60 VCEO Collector

BDT60 Distributors

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BDT60 Silicon PNP Power Transistor Inchange Semiconductor

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