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BDT60A, BDT60 Silicon PNP Power Transistor

BDT60A Description

isc Silicon PNP Darlington Power Transistors BDT60/A/B/C .
DC Current Gain -hFE = 750(Min)@ IC= -1. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Mi.

BDT60A Applications

* Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT60 -60 VCBO Collector-Base Voltage BDT60A -80 V BDT60B -100 BDT60C -120 BDT60 -60 VCEO Collector

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: BDT60A, BDT60. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BDT60A, BDT60
Manufacturer
Inchange Semiconductor
File Size
216.26 KB
Datasheet
BDT60-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor
Note
This datasheet PDF includes multiple part numbers: BDT60A, BDT60.
Please refer to the document for exact specifications by model.

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📌 All Tags

Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor BDT60A-like datasheet