BU522 Silicon Darlington NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon Darlington NPN Power Transistor BU522 .
High Voltage. Low Collector Saturation Voltage- : VCE(sat)= 2. Minimum Lot-to-Lot variations for robust device performance an.

📥 Download Datasheet

BU522 Datasheet Preview — Preview of BU522 PDF

Datasheet Specifications

Part number: BU522
Manufacturer: Inchange Semiconductor
File Size: 211.35 KB
Datasheet: BU522_InchangeSemiconductor.pdf
Description: Silicon Darlington NPN Power Transistor

Applications

* Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER(SUS) Collector-Emitter Voltage 350 V VCER Collector-Emitter Voltage 375 V VCBO Collector-Base Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 7 A IB

BU522 Distributors

📁 Related Datasheet

BU52272NUZ BU52273NUZ BU52274NUZ BU522A BU522B BU52001GUL

📌 All Tags

BU522 Silicon Darlington NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BU522-like datasheet

BU508A-2

BU508A-M

BU508AT