BU508A-2 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BU508A .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min). High Power Dissipation- : PD= 100W@TC= 25℃. Minimum Lot-to-Lot variations.

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Datasheet Specifications

Part number: BU508A-2
Manufacturer: Inchange Semiconductor
File Size: 214.86 KB
Datasheet: BU508A-2-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A ICM Collector Cu

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BU508A-2 Silicon NPN Power Transistor Inchange Semiconductor

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