BU522A Silicon Darlington NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon Darlington NPN Power Transistor BU522A .
High Voltage. Low Collector Saturation Voltage- : VCE(sat)= 2. Minimum Lot-to-Lot variations for robust device performance an.

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Datasheet Specifications

Part number: BU522A
Manufacturer: Inchange Semiconductor
File Size: 211.35 KB
Datasheet: BU522A_InchangeSemiconductor.pdf
Description: Silicon Darlington NPN Power Transistor

Applications

* Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER(SUS) Collector-Emitter Voltage 400 V VCER Collector-Emitter Voltage 425 V VCBO Collector-Base Voltage 450 V VEBO Emitter-Base Voltage 5 V IC Collector Current 7 A IB

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BU522A Silicon Darlington NPN Power Transistor Inchange Semiconductor

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