BU522A
Inchange Semiconductor
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Silicon darlington npn power transistor. *High Voltage *Low Collector Saturation Voltage- : VCE(sat)= 2.0V @ IC= 4A *Minimum Lot-to-Lot variations for robust device performan
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BU522 - POWER TRANSISTORS
(Motorola)
.
BU522 - Silicon Darlington NPN Power Transistor
(Inchange Semiconductor)
isc Silicon Darlington NPN Power Transistor
BU522
DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V @ IC= 4A ·Minimum Lo.
BU52272NUZ - Omnipolar Detection Hall
(ROHM)
Datasheet
Omnipolar Detection Hall IC
(Dual Outputs for both S and N Pole Polarity Detection)
BU52272NUZ
General Description The BU52272NUZ is omnip.
BU52273NUZ - Omnipolar Detection Hall
(ROHM)
Datasheet
Omnipolar Detection Hall IC
(Dual Outputs for both S and N Pole Polarity Detection)
BU52273NUZ
General Description The BU52273NUZ is omnip.
BU52274NUZ - Omnipolar Detection Hall
(ROHM)
Datasheet
Omnipolar Detection Hall IC
(Dual Outputs for both S and N Pole Polarity Detection)
BU52274NUZ
General Description The BU52274NUZ is omnip.
BU522A - POWER TRANSISTORS
(Motorola)
.
BU522B - NPN Transistor
(INCHANGE)
isc Silicon Darlington NPN Power Transistor
BU522B
DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V @ IC= 4A ·Minimum L.
BU522B - POWER TRANSISTORS
(Motorola Inc)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BU522B/D
High Voltage Silicon Power Darlingtons
Power Transistor mainly intended for u.
BU52001GUL - Omnipolar Detection Hall
(Rohm)
Hall ICs
Omnipolar Detection Hall ICs
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52053NVX,
BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,B.
BU52002GUL - Unipolar Detection Hall
(Rohm)
Hall ICs
Unipolar Detection Hall ICs
BU52002GUL,BU52003GUL,BU52012NVX,BU52012HFV,BU52013HFV
No.10045ECT03
●Description The unipolar Detection Hall I.
