BU508A-M Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min). High Power Dissipation- : PD= 100W@TC= 25℃ APPLICATIONS. Designed for hori.

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Datasheet Specifications

Part number: BU508A-M
Manufacturer: Inchange Semiconductor
File Size: 200.29 KB
Datasheet: BU508A-M-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 5A ICM Collector Current-P

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BU508A-M Silicon NPN Power Transistor Inchange Semiconductor

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