BU508A-M Datasheet - Inchange Semiconductor

BU508A-M - Silicon NPN Power Transistor

*Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) *High Power Dissipation- : PD= 100W@TC= 25℃ APPLICATIONS *Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO .

BU508A-M-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BU508A-M

Manufacturer:

Inchange Semiconductor

File Size:

200.29 KB

Description:

Silicon npn power transistor.

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BU508A-M Silicon NPN Power Transistor Inchange Semiconductor