BU508A-M Datasheet - Inchange Semiconductor

BU508A-M, Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min). High Power Dissipation- : PD= 100W@TC= 25℃ APPLICATIONS. Designed for hori.

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Datasheet Details

Part number:

BU508A-M

Manufacturer:

Inchange Semiconductor

File Size:

200.29 KB

Description:

Silicon NPN Power Transistor

Applications

* Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 5A ICM Collector Current-P

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