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BU508 - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) High Power Dissipation- : PD= 125W@TC= 25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in large screen color deflection circuits.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 125W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits.
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