BU508AT Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BU508AT .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min). High Power Dissipation- : PD= 100W@TC= 25℃. Minimum Lot-to-Lot variations.

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Datasheet Specifications

Part number: BU508AT
Manufacturer: Inchange Semiconductor
File Size: 211.12 KB
Datasheet: BU508AT-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A IC

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BU508AT Silicon NPN Power Transistor Inchange Semiconductor

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