BU999 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BU999 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min). High Switching Speed. High Power Dissipation. Minimum Lot-to-Lot variat.

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Datasheet Specifications

Part number: BU999
Manufacturer: Inchange Semiconductor
File Size: 214.89 KB
Datasheet: BU999_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for switching and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICP Collector Current-Pul

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BU999 Silicon NPN Power Transistor Inchange Semiconductor

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