BU912 Datasheet - Inchange Semiconductor

BU912, Silicon NPN Darlington Power Transistor

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device perfo.

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Datasheet Details

Part number:

BU912

Manufacturer:

Inchange Semiconductor

File Size:

211.60 KB

Description:

Silicon NPN Darlington Power Transistor

Applications

* Designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers,etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 5 V IC Collecto

BU912 Distributors

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