BU910 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device perfo.

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Datasheet Specifications

Part number: BU910
Manufacturer: Inchange Semiconductor
File Size: 212.13 KB
Datasheet: BU910-InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers,etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collecto

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BU910 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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