BUK456-60A
Inchange Semiconductor
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N-channel mosfet transistor.
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BUK456-60A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power tr.
BUK456-60B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power tr.
BUK456-60B - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=60V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations .
BUK456-60H - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-60H
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power tran.
BUK456-1000B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-1000B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power tr.
BUK456-100A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor
BUK456-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK456-100A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK456-100B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor
BUK456-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK456-100B - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK456-200A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
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