BUY57 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BUY57 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 125V(Min. Low Collector Saturation Voltage- : VCE(sat)= 1. Minimum Lot-to-.

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Datasheet Specifications

Part number: BUY57
Manufacturer: Inchange Semiconductor
File Size: 202.82 KB
Datasheet: BUY57-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general switching applications at higher outputs. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCES Collector-Emitter Voltage 150 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 6 V IC Collector

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BUY57 Silicon NPN Power Transistor Inchange Semiconductor

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