BUY58 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BUY58 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min. Low Collector Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number: BUY58
Manufacturer: Inchange Semiconductor
File Size: 202.18 KB
Datasheet: BUY58-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general switching applications at higher outputs. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 250 V VCES Collector-Emitter Voltage 250 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector

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BUY58 Silicon NPN Power Transistor Inchange Semiconductor

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