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D2562 - 2SD2562

D2562 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2562 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min). High DC Current Gain- : hFE= 5000( Min. Low Collector S.

D2562 Applications

* Designed for series regulator and general purpose applications. . iscsemi. cnABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT wwwVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 15 A IB

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2SD2562 Inchange Semiconductor
Inchange Semiconductor D2562-like datasheet