D2562 2SD2562

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2562 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min). High DC Current Gain- : hFE= 5000( Min. Low Collector S.

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Datasheet Specifications

Part number: D2562
Manufacturer: Inchange Semiconductor
File Size: 237.91 KB
Datasheet: D2562-InchangeSemiconductor.pdf
Description: 2SD2562

Applications

* Designed for series regulator and general purpose applications. . iscsemi. cnABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT wwwVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 15 A IB

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D2562 2SD2562 Inchange Semiconductor

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