D2560 - 2SD2560
Equivalent circuit C Darlington 2SD2560 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE= 2A VCB=10V, f=1MHz 2SD2560 100max 100max 150min 5000min∗ 2.5max 3.0max 70typ 120typ V V MHz pF 20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 B (70 Ω ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) sAbsolute maximum ratings (
