Datasheet4U Logo Datasheet4U.com

IRF231 - N-Channel MOSFET Transistor

Datasheet Summary

Description

Drain Current ID=9A@ TC=25℃ Drain Source Voltage- : VDSS= 150V(Min) Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) High Power,High Speed Applications APPLICATIONS Switching power supplies Motor controls,converters and solenoid driver High energy pulse circ

📥 Download Datasheet

Datasheet preview – IRF231

Datasheet Details

Part number IRF231
Manufacturer Inchange Semiconductor
File Size 42.34 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet IRF231 Datasheet
Additional preview pages of the IRF231 datasheet.

📁 Similar Datasheet

  • IRF231 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF231 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF231 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF230 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF230 - N-Channel Power MOSFET (Seme LAB)
  • IRF230 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF230 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF230 - N-CHANNEL TRANSISTORS (International Rectifier)
  • IRF232 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF232 - N-Channel Power MOSFET (Samsung semiconductor)
Other Datasheets by Inchange Semiconductor
  • IRF230 - N-Channel MOSFET Transistor
  • IRF232 - N-Channel MOSFET Transistor
  • IRF233 - N-Channel MOSFET Transistor
  • IRF234 - N-Channel MOSFET Transistor
  • IRF235 - N-Channel MOSFET Transistor
  • IRF236 - N-Channel MOSFET Transistor
  • IRF237 - N-Channel MOSFET Transistor
  • IRF220 - N-Channel MOSFET Transistor

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF231 DESCRIPTION ·Drain Current ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) ·High Power,High Speed Applications APPLICATIONS ·Switching power supplies ·Motor controls,converters and solenoid driver ·High energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 150 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 9 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
Published: |