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IRF232 - N-Channel MOSFET Transistor

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Description

Drain Current ID=8A@ TC=25℃ Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) =0.6Ω(Max) High Power,High Speed Applications APPLICATIONS Switching power supplies Motor controls,converters and solenoid driver High energy pulse circ

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Datasheet Details

Part number IRF232
Manufacturer Inchange Semiconductor
File Size 42.36 KB
Description N-Channel MOSFET Transistor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF232 DESCRIPTION ·Drain Current ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.6Ω(Max) ·High Power,High Speed Applications APPLICATIONS ·Switching power supplies ·Motor controls,converters and solenoid driver ·High energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 200 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 8 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
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