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MBR15100 - Schottky Barrier Rectifier

Datasheet Summary

Features

  • Metal of siliconrectifier, majonty carrier conducton.
  • Guard ring for transient protection.
  • Low power loss high efficiency.
  • High Surge Capability,High Current Capability.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – MBR15100

Datasheet Details

Part number MBR15100
Manufacturer Inchange Semiconductor
File Size 223.21 KB
Description Schottky Barrier Rectifier
Datasheet download datasheet MBR15100 Datasheet
Additional preview pages of the MBR15100 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR15100 FEATURES ·Metal of siliconrectifier, majonty carrier conducton ·Guard ring for transient protection ·Low power loss high efficiency ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MAXIMUN RATINGS ·Operating Temperature: -55C to +150C ·Storage Temperature: -55C to +150C ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltag IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 125℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 100 70 15 150 V V A
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