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MDD1903RH

N-Channel MOSFET Transistor

MDD1903RH Features

* Drain Current : ID= 12.8A@ TC=25℃

* Drain Source Voltage : VDSS= 100V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) @ VGS= 10V

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* motor drive

MDD1903RH General Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 12.8 A IDM Drain Current-Single Pluse 40 A PD T.

MDD1903RH Datasheet (287.15 KB)

Preview of MDD1903RH PDF

Datasheet Details

Part number:

MDD1903RH

Manufacturer:

Inchange Semiconductor

File Size:

287.15 KB

Description:

N-channel mosfet transistor.

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