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MJH11020 Silicon NPN Power Transistor

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Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification MJH11020 .
High DC Current Gain- : hFE = 400(Min)@ IC= 10A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min). Low Collector-Emitter Sat.

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Datasheet Specifications

Part number
MJH11020
Manufacturer
Inchange Semiconductor
File Size
151.64 KB
Datasheet
MJH11020-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 200 VCEO Collector-Emitter Voltage 200 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor MJH11020-like datasheet