MJH11020 - Silicon NPN Power Transistor
*High DC Current Gain- : hFE = 400(Min)@ IC= 10A *Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.5V(Max)@ IC= 10A = 4.0V(Max)@ IC= 15A *Complement to Type MJH11019 APPLICATIONS *Designed for general purpose
