ST26025A Silicon PNP Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification ST26025A .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min. High DC Current Gain- : hFE= 750(Min. Low Collector Saturation V.

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Datasheet Specifications

Part number: ST26025A
Manufacturer: Inchange Semiconductor
File Size: 207.15 KB
Datasheet: ST26025A-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Curre

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ST26025A Silicon PNP Power Transistor Inchange Semiconductor

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