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2SA755 POWER TRANSISTOR

2SA755 Description

isc Silicon PNP Power Transistor 2SA755 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min). Low Collector Saturation Voltage- : VCE(sat)= -1. Good L.

2SA755 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -2 A PC Total Power Di

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Datasheet Details

Part number
2SA755
Manufacturer
Inchange Semiconductor
File Size
209.72 KB
Datasheet
2SA755_InchangeSemiconductor.pdf
Description
POWER TRANSISTOR

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POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA755-like datasheet