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2SD1737 Power Transistor

2SD1737 Description

isc Silicon NPN Power Transistor .
High Voltage. High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust device performance and reli.

2SD1737 Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector C

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Power Transistor Inchange Semiconductor
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