Datasheet4U Logo Datasheet4U.com

30N06 N-Channel MOSFET

30N06 Description

isc N-Channel MOSFET Transistor *.

30N06 Features

* Static drain-source on-resistance: RDS(on) ≤0.05Ω
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable for synchronous rectification for server and general purpose applicatio

30N06 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 100 PD Total Dissipation @TC=25℃ 105 Tj Max. Operating Junction Temperature 150 Tstg Storage Te

📥 Download Datasheet

Preview of 30N06 PDF
datasheet Preview Page 2

Datasheet Details

Part number
30N06
Manufacturer
Inchange Semiconductor
File Size
281.66 KB
Datasheet
30N06-InchangeSemiconductor.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • 30N06-Q - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 30N06G - N-CHANNEL POWER MOSFET (UTC)
  • 30N06L - N-CHANNEL POWER MOSFET (UTC)
  • 30N06V-Q - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 30N20 - 200V N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 30N20G - Power MOSFET (ON Semiconductor)
  • 30N40 - 400V N-Channel MOSFET (Fairchild Semiconductor)
  • 30N45 - N-Channel MOSFET (IXYS)

📌 All Tags

N-Channel MOSFET Inchange Semiconductor
Inchange Semiconductor 30N06-like datasheet