The BD912 by Inchange Semiconductor is a Silicon NPN Power Transistors. Below is the official datasheet preview.
| Part number | BD912 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.81 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
 BD912_InchangeSemiconductor.pdf
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DC Current Gain - : hFE = 40@ IC= -0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) Complement to Type BD911 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC
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