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BUL128DB - Silicon NPN Power Transistor

BUL128DB Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL128DB .
Collector. Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min. Low Collector Saturation Voltage : VCE(sat) = 0.

BUL128DB Applications

* Designed for electronic ballasts for fluorescent lighting. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 4A ICM Collector Curren

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Datasheet Details

Part number
BUL128DB
Manufacturer
Inchange Semiconductor
File Size
157.64 KB
Datasheet
BUL128DB-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BUL128DB-like datasheet