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D1170 - 2SD1170

D1170 Description

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1170 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min). High DC Current Gain: hFE= 2000( Min. Low Collector Satura.

D1170 Applications

* Driver for solenoid,motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE 120 V 120 V 6 V 6 A 10 A 1 A UNIT n c . i m e IC Collector Curren

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2SD1170 Inchange Semiconductor
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