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ST26025A Silicon PNP Power Transistor

ST26025A Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification ST26025A .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min. High DC Current Gain- : hFE= 750(Min. Low Collector Saturation V.

ST26025A Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Curre

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Datasheet Details

Part number
ST26025A
Manufacturer
Inchange Semiconductor
File Size
207.15 KB
Datasheet
ST26025A-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor ST26025A-like datasheet