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BF543 Datasheet - Infineon Technologies AG

BF543 Silicon N-Channel MOSFET Triode

BF543 Silicon N-Channel MOSFET Triode  For high-frequency stages up to 300 MHz 3 preferably in FM applications  IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF543 Maximum Ratings Parameter Drain-source voltage Drain current Marking LDs 1=G Pin Configuration 2=D 3=S Package SOT23 Symbol VDS ID Value 20 30 10 200 -55 150 -55 150 150 Unit V mA mW °C Gate-source peak current Total power dissipation, TS  76 °C S.

BF543_InfineonTechnologiesAG.pdf

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Datasheet Details

Part number:

BF543

Manufacturer:

Infineon ↗ Technologies AG

File Size:

50.25 KB

Description:

Silicon n-channel mosfet triode.

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BF543 BF543 Silicon N-Channel MOSFET Triode Infineon Technologies AG

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