BF543 - Silicon N-Channel MOSFET Triode
BF543 Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz 3 preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF543 Maximum Ratings Parameter Drain-source voltage Drain current Marking LDs 1=G Pin Configuration 2=D 3=S Package SOT23 Symbol VDS ID Value 20 30 10 200 -55 150 -55 150 150 Unit V mA mW °C Gate-source peak current Total power dissipation, TS 76 °C S
