BFR193T - NPN Silicon RF Transistor
BFR193T NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz 3 F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR193T Maximum Ratings Parameter Marking RCs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SC75 Value 12 20 20 2 80 10 280 150 mW °C mA Unit V Collector-emitter voltage Collector-emi
