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BFR193T Datasheet - Infineon Technologies AG

BFR193T NPN Silicon RF Transistor

BFR193T NPN Silicon RF Transistor Preliminary data  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz 3 F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR193T Maximum Ratings Parameter Marking RCs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SC75 Value 12 20 20 2 80 10 280 150 mW °C mA Unit V Collector-emitter voltage Collector-emi.

BFR193T_InfineonTechnologiesAG.pdf

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Datasheet Details

Part number:

BFR193T

Manufacturer:

Infineon ↗ Technologies AG

File Size:

70.12 KB

Description:

Npn silicon rf transistor.

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BFR193T BFR193T NPN Silicon Transistor Infineon Technologies AG

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