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BFR193W Datasheet - Infineon Technologies AG

BFR193W Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available BFR193W 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR193W Marking Pin Configuration RCs 1=B 2=E 3=C Package SOT323 Maximum Ratings at TA = 25 °C, unless.

BFR193W_InfineonTechnologiesAG.pdf

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Datasheet Details

Part number:

BFR193W

Manufacturer:

Infineon ↗ Technologies AG

File Size:

647.52 KB

Description:

Low noise silicon bipolar rf transistor.

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BFR193W BFR193W Low Noise Silicon Bipolar Transistor Infineon Technologies AG

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