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IDW20G65C5

SiC Schottky Barrier diodes

IDW20G65C5 Features

* Revolutionary semiconductor material - Silicon Carbide

* Benchmark switching behavior

* No reverse recovery/ No forward recovery

* Temperature independent switching behavior

* High surge current capability

* Pb-free lead plating; RoHS compliant

* Qualified according to

IDW20G65C5 General Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics .

IDW20G65C5 Datasheet (1.14 MB)

Preview of IDW20G65C5 PDF

Datasheet Details

Part number:

IDW20G65C5

Manufacturer:

Infineon ↗ Technologies

File Size:

1.14 MB

Description:

Sic schottky barrier diodes.
SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW20G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimark.

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TAGS

IDW20G65C5 SiC Schottky Barrier diodes Infineon Technologies

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