* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant
* Qualified according to
IDW16G65C5 Datasheet (1.14 MB)
IDW16G65C5
Infineon ↗ Technologies
1.14 MB
Sic schottky barrier diodes.
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDW16G65C5
Final Datasheet
Rev. 2.2, 2013-01-15
Power Management & Multimark.
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