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IDW24G65C5B - Silicon Carbide Diode

Infineon

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Datasheet Details

Part number	IDW24G65C5B
Manufacturer	Infineon
File Size	721.03 KB
Description	Silicon Carbide Diode
Datasheet	IDW24G65C5B-Infineon.pdf

IDW24G65C5B Product details

Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

Features

Revolutionary semiconductor material - Silicon Carbide.
Benchmark switching behavior.
No reverse recovery/ No forward recovery.
Temperature independent switching behavior.
High surge current capability.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Feb 23, 2016 |