IDW24G65C5B

Silicon Carbide Diode

Infineon

IDW24G65C5B Features

* Revolutionary semiconductor material - Silicon Carbide

* Benchmark switching behavior

* No reverse recovery/ No forward recovery

* Temperature independent switching behavior

* High surge current capability

* Pb-free lead plating; RoHS compliant

* Qualified according to

IDW24G65C5B General Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved ther.

IDW24G65C5B Datasheet (721.03 KB)

IDW24G65C5B Datasheet Preview — Preview of IDW24G65C5B PDF

Datasheet Details

Part number:

IDW24G65C5B

Manufacturer:

Infineon ↗

File Size:

721.03 KB

Description:

Silicon carbide diode.
SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW24G65C5B Final Datasheet Rev. 2.0, 2015-04-13 Power Management & Multimar.

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IDW24G65C5B Silicon Carbide Diode Infineon

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IDW24G65C5B Features

IDW24G65C5B General Description

Datasheet Details

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