IDW10G120C5B Datasheet - Infineon

IDW10G120C5B - Silicon Carbide Schottky Diode

2 Table of Contents3 Maximum Ratings 4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics Diagram 5 Package Drawings 9 Revision History 10 Disclaimer 11 Final Data Sheet 3 Rev. 2.1, 2017-07-21 IDW10G120C5B 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Maximum ratin.

IDW10G120C5B Features

* Revolutionary semiconductor material - Silicon Carbide

* No reverse recovery current / No forward recovery

* Temperature independent switching behavior

* Low forward voltage even at high operating temperature

* Tight forward voltage distribution

* Excellent thermal perform

IDW10G120C5B-Infineon.pdf