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IDW10G120C5B - Silicon Carbide Schottky Diode

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2 Table of Contents3 Maximum Ratings 4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics Diagram 5 Package Drawings 9 Revision History 10 Disclaimer 11 Final Data Sheet 3 Rev.2.1, 2017-07-21 IDW10G120C5B 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Maximum ratings Parameter Repetitive peak reverse voltage Continuous forward current for Rth(j-c,max) TC = 156°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 Surge non-repetitive forward current, sine halfwave TC=25°C, tp=.

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