IPB80N04S2-H4 Datasheet, Power-transistor, Infineon Technologies

IPB80N04S2-H4 Features

• Power-transistor
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on) <

PDF File Details

Part number:

IPB80N04S2-H4

Manufacturer:

Infineon ↗ Technologies

File Size:

190.42kb

Download:

📄 Datasheet

Description:

Power-transistor.

TAGS

IPB80N04S2-H4

Infineon Technologies

📁 Related Datasheet

IPB80N04S2-04 - Power-Transistor (Infineon Technologies)
IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 u.

IPB80N04S2L-03 - Power-Transistor (Infineon Technologies)
IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up.

IPB80N04S3-03 - Power-Transistor (Infineon Technologies)
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.

IPB80N04S3-06 - Power-Transistor (Infineon Technologies)
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.

IPB80N04S4-03 - Power-Transistor (Infineon)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.

IPB80N04S4-04 - Power-Transistor (Infineon)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.

IPB80N04S4L-04 - Power-Transistor (Infineon)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.

IPB80N03S4L-02 - Power-Transistor (Infineon)
IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 30 2.4 80 PG-TO262-3-1.

IPB80N03S4L-03 - Power-Transistor (Infineon)
IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 30 3.4 80 V mΩ A Feat.

IPB80N06S2-05 - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating tem.