IPD90R1K2C3
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IPD90R1K2C3 - N-Channel MOSFET
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isc N-Channel MOSFET Transistor IPD90R1K2C3,IIPD90R1K2C3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1.2Ω ·Enhancement mode: ·100% avalanch.
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OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.
IPD90N04S4-04 - Power-Transistor
(Infineon Technologies)
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.
IPD90N04S4-05 - Power-Transistor
(Infineon)
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.
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(Infineon)
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