IPD90R1K2C3 Datasheet, Transistor, Infineon Technologies

IPD90R1K2C3 Features

  • Transistor
  • Lowest figure-of-merit RON x Qg
  • Extreme dv/dt rated
  • High peak current capability Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ 900 V 1.2

PDF File Details

Part number:

IPD90R1K2C3

Manufacturer:

Infineon ↗ Technologies

File Size:

378.09kb

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📄 Datasheet

Description:

Power transistor.

Datasheet Preview: IPD90R1K2C3 📥 Download PDF (378.09kb)
Page 2 of IPD90R1K2C3 Page 3 of IPD90R1K2C3

IPD90R1K2C3 Application

  • Applications
  • Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda)
  • Ultra low gate charge PG-TO252

TAGS

IPD90R1K2C3
Power
Transistor
Infineon Technologies

📁 Related Datasheet

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isc N-Channel MOSFET Transistor IPD90R1K2C3,IIPD90R1K2C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.2Ω ·Enhancement mode: ·100% avalanch.

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.

IPD90N04S4-04 - Power-Transistor (Infineon Technologies)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.

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Stock and price

Infineon Technologies AG
MOSFET N-CH 900V 5.1A TO252-3
DigiKey
IPD90R1K2C3ATMA2
1989 In Stock
Qty : 1000 units
Unit Price : $0.69
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