IPI65R280C6
Infineon ↗ Technologies
1.31MB
Power transistor.
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IPI65R280C6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .
IPI65R280E6 - Power Transistor
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
650V CoolMOS™ E6 Power Transistor IPx65R280E6
Data Sheet
Rev. 2.0, 2010-04-26 Fi.
IPI65R280E6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .
IPI65R065C7 - MOSFET
(Infineon)
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IPI65R099C6 - MOSFET
(Infineon)
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IPI65R099C6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche.
IPI65R110CFD - MOSFET
(Infineon)
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IPI65R110CFD - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.11Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .
IPI65R150CFD - MOSFET
(Infineon)
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IPI65R150CFD - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.15Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .
