IPI65R280E6 Datasheet, Transistor, Infineon Technologies

IPI65R280E6 Features

• Transistor
• Extremely low losses due to very low FOM Rdson
• Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free

PDF File Details

Part number:

IPI65R280E6

Manufacturer:

Infineon ↗ Technologies

File Size:

2.19MB

Download:

📄 Datasheet

Description:

Power transistor. CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pi

IPI65R280E6 Application

• Applications even more efficient, more compact, lighter, and cooler. Features
• Extremely low losses due to ve

TAGS

IPI65R280E6

Infineon Technologies

📁 Related Datasheet

IPI65R280E6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .

IPI65R280C6 - Power Transistor (Infineon Technologies)
FGK@?L FTcP[ GgXST KT\XR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a =^^[FGKm =6 65*M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx65J280=6 >PcP KWTTc Rev. 2.1 @X]P[ H^fTa FP].

IPI65R280C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .

IPI65R065C7 - MOSFET (Infineon)
# $% &% '( ) * + * , * $ 2 # 32 # 3# $ 3 4 *3 3 # 45 6 78 4 4 4 92 # 3% 9# 4 # 37 44 # # 3# $% # 3 $ 4$ 9 #3 7 # 3 % 2 #3.

IPI65R099C6 - MOSFET (Infineon)
# $% &% '( ) * + * , * $ 2 # 32 # 3# $ 3 4 *3 3 # 45 6 78 4 4 4 92 # 3% 9# 4 # 37 44 # # 3# $% # 3 $ 4$ 9 #3 7 # 3 % 2 #3.

IPI65R099C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche.

IPI65R110CFD - MOSFET (Infineon)
## $ %& & '( ) ## * + ## , ## * ## * ## % 2 $ 32 $ 3$ % 3 4 *3 3 $ 45 6 78 4 4 4 92 $ 3& 9 $4 $ 37 44 $ $ 3$ % &.

IPI65R110CFD - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.11Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .

IPI65R150CFD - MOSFET (Infineon)
# $ %& & '( ) # * + # , # * # * # % 2 $ 32 $ 3$ % 3 4 *3 3 $ 45 6 78 4 4 4 92 $ 3& 9 $4 $ 37 44 $ $ 3$ % &$ 3 %.

IPI65R150CFD - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.15Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .