Part number:
IPP065N06LG
Manufacturer:
Infineon ↗ Technologies
File Size:
480.24 KB
Description:
Power-transistor.
* For fast switching converters and sync. rectification
* N-channel enhancement - logic level
* 175 °C operating temperature
* Avalanche rated
* Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID 60 6.5 80 V mΩ A Type IPB065N06L G IP
IPP065N06LG Datasheet (480.24 KB)
IPP065N06LG
Infineon ↗ Technologies
480.24 KB
Power-transistor.
📁 Related Datasheet
IPP065N03L - Power-Transistor
(Infineon)
Je]R
%&$ #b %
IPP065N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP065N03L,IIPP065N03L
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤6.5mΩ ·Enhancem.
IPP065N03LG - Power-Transistor
(Infineon Technologies)
Je]R
%&$ #b %
IPP060N06N - Power-Transistor
(Infineon Technologies)
Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .
IPP060N06N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP060N06N,IIPP060N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤6.0mΩ ·Enhancem.
IPP062NE7N3 - N-Channel MOSFET
(INCHANGE)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPP062NE7N3,IIPP062NE7N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤6.2mΩ ·Enhance.
IPP062NE7N3 - Power-Transistor
(Infineon)
# #
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q( @D9=9J54 D53 8>? 7I 6? BCI>3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3.
IPP062NE7N3G - Power-Transistor
(Infineon)
# #
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q( @D9=9J54 D53 8>? 7I 6? BCI>3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3.