Part number:
IPP062NE7N3
Manufacturer:
INCHANGE
File Size:
241.37 KB
Description:
N-channel mosfet.
IPP062NE7N3 Datasheet (241.37 KB)
* Static drain-source on-resistance: RDS(on) ≤6.2mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* reliable device for use in a wide variety of applications
IPP062NE7N3 Datasheet (241.37 KB)
IPP062NE7N3
INCHANGE
241.37 KB
N-channel mosfet.
📁 Related Datasheet
IPP062NE7N3 - Power-Transistor
(Infineon)
# #
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q( @D9=9J54 D53 8>? 3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3.
IPP062NE7N3G - Power-Transistor
(Infineon)
# #
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q( @D9=9J54 D53 8>? 3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3.
IPP060N06N - Power-Transistor
(Infineon Technologies)
Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .
IPP060N06N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP060N06N，IIPP060N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤6.0mΩ ·Enhancem.
IPP065N03L - Power-Transistor
(Infineon)
Je]R
%&$ #b %
IPP065N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP065N03L，IIPP065N03L
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤6.5mΩ ·Enhancem.
IPP065N03LG - Power-Transistor
(Infineon Technologies)
Je]R
%&$ #b %
IPP065N06LG - Power-Transistor
(Infineon Technologies)
..
IPB065N06L G
IPP065N06L G
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channe.
