IPP069N20NM6 MOSFET

Infineon

Description

Public IPP069N20NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 200 V .
1 Maxi.

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Datasheet Specifications

Part number: IPP069N20NM6
Manufacturer: Infineon ↗
File Size: 895.62 KB
Datasheet: IPP069N20NM6-Infineon.pdf
Description: MOSFET

Features

* N‑channel, normal level
* Very low on‑resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Pb‑free lead plating; RoHS compli

Applications

* Table 1 Key performance parameters Parameter Value Unit VDS 200 V RDS(on),max 6.9 mΩ ID 136 A Qoss 232 nC QG 73 nC Qrr (1000A/μs) 391 nC Part number IPP069N20NM6 Package PG‑TO220‑3 PG‑TO220‑3 tab 1 23 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 069N20N6 Related li

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IPP069N20NM6 MOSFET Infineon

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