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IPP126N10N3G Power-Transistor

IPP126N10N3G Description

IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor .

IPP126N10N3G Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* 175 °C operating temperature Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A
* Pb-free lead plating; RoHS compliant
* Quali

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Power-Transistor Infineon Technologies
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