IPP200N15N3G Datasheet - Infineon Technologies

IPP200N15N3G - Power-Transistor

IPP200N15N3G Features

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant

* Qualified accor

Datasheet Details

IPP200N15N3G

Infineon ↗ Technologies

0.97 MB

Power-transistor.

IPP200N15N3G Distributor

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