IPP26CN10N Datasheet, Mosfet, INCHANGE

IPP26CN10N Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤26mΩ
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations f

PDF File Details

Part number:

IPP26CN10N

Manufacturer:

INCHANGE

File Size:

241.81kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IPP26CN10N Application

• Applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 I

TAGS

IPP26CN10N

INCHANGE

📁 Related Datasheet

IPP26CN10N - Power-Transistor (Infineon)
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) .

IPP26CN10NG - Power-Transistor (Infineon)
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) .

IPP26CNE8NG - Power-Transistor (Infineon Technologies)
.. IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level •.

IPP200N15N3 - Power-Transistor (Infineon)
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(.

IPP200N15N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP200N15N3,IIPP200N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switchi.

IPP200N15N3G - Power-Transistor (Infineon Technologies)
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(.

IPP200N25N3 - Power-Transistor (Infineon)
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.

IPP200N25N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP200N25N3，IIPP200N25N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switchin.

IPP200N25N3G - Power-Transistor (Infineon Technologies)
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product .

IPP220N25NFD - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTMFD Power-Transistor, 250 V IPP220N25NFD Data Sheet Rev. 2.0 Final Power Ma.