Datasheet4U Logo Datasheet4U.com

IPP26CN10N

N-Channel MOSFET

IPP26CN10N Features

* Static drain-source on-resistance: RDS(on) ≤26mΩ

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* reliable device for use in a wide variety of applications

IPP26CN10N Datasheet (241.81 KB)

Preview of IPP26CN10N PDF

Datasheet Details

Part number:

IPP26CN10N

Manufacturer:

INCHANGE

File Size:

241.81 KB

Description:

N-channel mosfet.

📁 Related Datasheet

IPP26CN10N - Power-Transistor (Infineon)
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) .

IPP26CN10NG - Power-Transistor (Infineon)
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) .

IPP26CNE8NG - Power-Transistor (Infineon Technologies)
.. IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level •.

IPP200N15N3 - Power-Transistor (Infineon)
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(.

IPP200N15N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP200N15N3,IIPP200N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switchi.

IPP200N15N3G - Power-Transistor (Infineon Technologies)
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(.

IPP200N25N3 - Power-Transistor (Infineon)
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.

IPP200N25N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP200N25N3，IIPP200N25N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switchin.

TAGS

IPP26CN10N N-Channel MOSFET INCHANGE

Image Gallery

IPP26CN10N Datasheet Preview Page 2

IPP26CN10N Distributor