IPP26CN10N Datasheet - INCHANGE

IPP26CN10N, N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP26CN10N，IIPP26CN10N *.

Features

* Static drain-source on-resistance: RDS(on) ≤26mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 71 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

IPP26CN10N-INCHANGE.pdf