* N-channel - Enhancement mode
* Automotive AEC Q101 qualified
* MSL1 up to 260°C peak reflow
* 175°C operating temperature
* Green product (RoHS compliant)
* Ultra low Rds(on)
* 100% Avalanche tested PG-TO263-3-2 PG-TO220-3-1 Type IPB22N03S
IPP22N03S4L-15 Datasheet (185.38 KB)
IPP22N03S4L-15
Infineon ↗ Technologies
185.38 KB
Power-transistor.
IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15
OptiMOS®-T2 Power-Transistor
Product Summary V DS R DS(on),max (SMD version) ID 30 14.6 22 PG-TO262-3-.
📁 Related Datasheet
IPP220N25NFD - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSTMFD Power-Transistor, 250 V IPP220N25NFD
Data Sheet
Rev. 2.0 Final
Power Ma.
IPP220N25NFD - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP220N25NFD，IIPP220N25NFD
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤22mΩ ·Enhancement mode ·Fast Switch.
IPP200N15N3 - Power-Transistor
(Infineon)
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(.
IPP200N15N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP200N15N3,IIPP200N15N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switchi.
IPP200N15N3G - Power-Transistor
(Infineon Technologies)
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(.
IPP200N25N3 - Power-Transistor
(Infineon)
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.
IPP200N25N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP200N25N3，IIPP200N25N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switchin.
IPP200N25N3G - Power-Transistor
(Infineon Technologies)
IPB200N25N3 G
IPP200N25N3 G IPI200N25N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product .
